| PART |
Description |
Maker |
| R1LV0108ESP-5SIB0 R1LV0108ESP-5SIS0 R1LV0108ESP-5S |
1Mb Advanced LPSRAM (128k word x 8bit)
|
Renesas Electronics Corporation
|
| R1WV3216R08 R1WV3216RBG-8SI R1WV3216RBG-8SR R1WV32 |
32Mb Advanced LPSRAM (2M wordx16bit)
|
Renesas Electronics Corporation
|
| R1LV1616RBG-8SI R1LV1616RBG-8SR R1LV1616RSD-5SI R1 |
16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit)
|
http://
Renesas Electronics Corporation
|
| N01L83W2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 8 bit
|
ON Semiconductor
|
| MPC2105A MPC2106ASG66 MPC2105B |
(MPC2105x / MPC2106x) 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 128K X 72 CACHE TAG SRAM MODULE, 9 ns, DMA178
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 512KBMB的二级缓存模块BurstRAM为PowerPC制备/ CH旺平
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| MPC2105C MPC2106CDG66 |
(MPC2105C / MPC2106C) 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 128K X 72 CACHE SRAM MODULE, 9 ns, PDMA178
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| CAT28F010NI-12T CAT28F010TI-90T CAT28F010TI-12T CA |
1 Megabit CMOS Flash Memory
128K X 8 FLASH 12V PROM, 90 ns, PDSO32
Bulk Erase Flash Memory, 1Mb
128K X 8 FLASH 12V PROM, 90 ns, PDIP32
|
http://
CATALYST[Catalyst Semiconductor]
ON SEMICONDUCTOR
|
| MSM548128BL MSM548128BL-70GS-K MSM548128BL-80GS-K |
128K X 8 PSEUDO STATIC RAM, 80 ns, PDSO32
128K X 8 PSEUDO STATIC RAM, 70 ns, PDSO32
From old datasheet system
131,072-Word x 8-Bit High-Speed PSRAM
|
OKI ELECTRIC INDUSTRY CO LTD
|
| CXK5T81000ATN/AYN-10LLX CXK5T81000ATN/AYN-12LLX CX |
128K X 8 STANDARD SRAM, 120 ns, PDSO32 8 X 13.40 MM, PLASTIC, TSOP-32
128K X 8 STANDARD SRAM, 100 ns, PDSO32 8 X 13.40 MM, PLASTIC, TSOP-32
131072-word x 8-bit High Speed CMOS Static RAM
|
Electronic Theatre Controls, Inc.
SONY
|
| GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM
12ns 100MHz 32K x 32 1Mb synchronous burst SRAM
10ns 133MHz 32K x 32 1Mb synchronous burst SRAM
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
| M5M51008BKR-10L M5M51008BKR-10LL M5M51008BKR-55L M |
128K X 8 STANDARD SRAM, 100 ns, PDSO32
1048576-bit (131072-word by 8-bit) CMOS static SRAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静RAM
128K X 8 STANDARD SRAM, 70 ns, PDSO32
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
